Our innovative approach is centered around high-frequency and high-power semiconductor devices, with a particular emphasis on advanced compound semiconductor components.
Among these components are GaAs-based MMICs (Monolithic Microwave Integrated Circuits), HEMTs (High Electron Mobility Transistors), and power amplifiers.
These devices utilize a unique architecture where a thin active layer made of gallium arsenide (GaAs) is either integrated with, supported by, or bonded to a substrate that boasts high thermal conductivity, such as silicon carbide (SiC) or aluminum nitride (AlN), among others.
This design approach facilitates remarkable enhancements in thermal management capabilities, leading to improved reliability over time. Furthermore this configuration allows for a substantial increase in power density, making our semiconductor devices not only more efficient but also more robust in demanding applications.